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ACS Appl. Electron. Mater.

發(fā)布時(shí)間： 2022-12-22關(guān)注次數(shù)：666

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ACS Applied Electronic Materials

Volume 3, Issue 2

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February 23, 2021

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Stable Terahertz In Situ Photo-Writable Electrically Erasable Memory with a CsPbI₃:Ag/SnO₂/PEDOT:PSS Hybrid Structure

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Bin Liu¹, Jingyu Liu¹, Longfeng Lv², Yanbing Hou³, Jingling Shen^1,* and Bo Zhang^1,*

首都師范大學(xué)張波副教授、沈京玲教授

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¹ Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing Key Laboratory of Metamaterials and Devices, Advanced Innovation Center for Imaging Technology, Department of Physics, Capital Normal University, Beijing 100048, China

² Institution of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

³ Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China

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